SiC Senior Process Design and Integration Engineer

Vishay Intertechnology, Inc.; Newport; Presencial; GBP 60.000 - 85.000; Jornada completa

Ventajas ofrecidas por este puesto de trabajo

Health care coverage

Financial support

Opportunities to work globally

Descripción de la vacante

Vishay Intertechnology, Inc. in Newport, UK is looking for a Semiconductor Process Design and Integration Engineer. This role entails designing and simulating process flows for advanced SiC Power MOSFETs, performing electrical characterization, and leading development projects throughout fabrication. The ideal candidate will have a PhD or Master's degree in semiconductor device/material physics and at least 10 years of experience in power semiconductor technology. Vishay offers comprehensive benefits, health care coverage, and opportunities for global collaboration.

Formación

• 10+ years of experience in power semiconductor technology.
• Experience leading development projects through fabrication process integration.
• Knowledge of semiconductor materials for power semiconductor applications.

Responsabilidades

• Design and simulate fabrication process flow for SiC Power MOSFET.
• Perform electrical characterization on SiC devices.
• Analyze data to extract key device parameters.

Conocimientos

TCAD simulation for power semiconductor devices

Project management

Technical communication

Problem-solving

Interpersonal skills

Data analysis

Educación

PhD or Master's degree in semiconductor device/material physics

Herramientas

MATLAB

MathCAD

Descripción del empleo

Vishay Newport, UK is seeking a Semiconductor Process Design and Integration Engineer for our Silicon Carbide development.

This position is located in Newport, UK.

What You Will Be Doing

• Design and simulation of fabrication process flow for the advanced SiC Power MOSFET.
• Develop PCM/TEG structures for monitoring and evaluation of the fabrication process.
• Define and develop specifications of unit processes and coordinate their development with the fab process team.
• Perform electrical characterization on SiC power semiconductor devices and the related PCM/TEG structures on the wafer.
• Analyze data from device and TEG structures to extract key device parameters, including gate oxide thickness, QBD, interface charge density, channel mobility, etc.
• Devise process experiments for process window optimization and improving manufacturing yield.

What You Will Bring Along

• A PhD or Master's level degree in semiconductor device/material physics.
• At least 10 years of post-graduation experience in power semiconductor technology.
• Experience leading development projects throughout fabrication process integration, simulation and characterization, with ability to apply project management best practices.
• Rich experience in TCAD simulation for power semiconductor devices, especially WBG semiconductors; knowledge of MATLAB, MathCAD for characteristic analysis.
• Knowledge of semiconductor material for power semiconductor device applications is desirable.
• Excellent problem‑solving skills, able to identify problems/opportunities, assess viable solutions, and develop action plans.
• Ability to manage multiple assignments concurrently and prioritize accordingly.
• Effective communication skills, especially technical communication.
• Excellent interpersonal and teamwork skills; able to build rapport with operations and cross‑functional colleagues.

What Can We Offer You

Vishay offers comprehensive benefit programs, including health care coverage and financial support, to help achieve your personal and professional goals. You’ll experience open collaboration, a stable business, and opportunities to work globally and locally.