RF Device Modelling & Characterisation Engineer

Microchip Technology Inc.; Belfast; On-site; GBP 50,000 - 70,000; Full time

Job summary

Microchip Technology Inc. is looking for a Senior RF Device Modelling and Characterisation Engineer in Belfast, UK. This role involves enhancing RF Power Amplifiers through on-wafer characterisation and device modelling for communications and radar applications. Applicants should have a Bachelor's degree in engineering with 5+ years of experience in RF testing and familiarity with tools like Keysight ADS and Cadence AWR. The position includes responsibilities such as developing testing methods and leading a technical team within a culture of excellence.

Qualifications

• 5+ years of experience in RF/microwave testing and applications engineering.
• In-depth knowledge of RF device modelling and on-wafer characterisation.
• Proficiency in operating RF semiconductor test equipment such as probe stations, pulsed DC‑IV, and VNA.

Responsibilities

• Perform on-wafer characterisation of GaN devices, pulsed DC‑IVs, and S-parameters up to 67 GHz.
• Develop and implement advanced de-embedding and parasitic extraction techniques.
• Prepare detailed verification reports on GaN HEMT and passive models.

Skills

RF device modelling

On-wafer characterisation

Knowledge of RF EDA tools

Software automation (Python, MATLAB, or C)

Education

Bachelor's degree in engineering (electrical, RF, or related field)

Tools

Keysight ADS

Cadence AWR Microwave Office

HFSS

Job description

Microchip, a forward‑thinking semiconductor company at the forefront of GaN MMIC innovation, is seeking a Senior RF Device Modelling and Characterisation Engineer to support and drive the development and testing of our industry‑leading RF Power Amplifiers. This position plays a pivotal role in advancing products for applications in Communications, Radar, Satellite and Instrumentation markets.

The role is based out of our Belfast, UK offices and reports to the Senior Technical Staff Engineer.

Key Responsibilities

• Perform on‑wafer characterisation of GaN devices, pulsed DC‑IVs, S‑parameters up to 67 GHz using a vector network analyser.
• Perform on‑wafer active load‑pull measurements to validate large‑signal performance.
• Develop and implement advanced de‑embedding and parasitic extraction techniques.
• Develop and maintain GaN HEMT compact device models for use in advanced GaN MMIC design, supporting both Keysight ADS and Cadence AWR Microwave Office EDA platforms.
• Develop and/or verify passive models in conjunction with foundry available PDK models, performing 2.5D and 3D electromagnetic simulation.
• Develop advanced automated processes, including use of AI, for characterisation, extraction and modelling techniques for efficient delivery of GaN device models and other newly available processes.
• Prepare detailed verification reports on GaN HEMT and passive models.
• Work closely with the MMIC design team in assessing new fabrication processes and troubleshooting discrepancies between simulated and measured results.
• Lead by example to uphold a culture of ethics, accountability, and technical excellence.

Requirements/Qualifications

• Bachelor’s degree in engineering (electrical, RF or related field) with 5+ years’ experience in RF/microwave testing and applications engineering.
• In‑depth knowledge of RF device modelling and on‑wafer characterisation.
• Familiarity with RF EDA tools such as Keysight ADS and Cadence AWR Microwave Office, and/or other 2.5D and 3D electromagnetic simulation tools such as HFSS.
• Proficiency in operating RF semiconductor test equipment: probe stations, pulsed DC‑IV, VNA, etc.
• Strong software skills for process automation using tools such as Python, MATLAB or C.

Travel Time

0% – 25%