Research Associate: Defect Physics for High-Al GaN UVC LEDs

Diversity Dashboard; Manchester; On-site; GBP 42,000 - 55,000; Full time

Benefits offered by this job

Generous employer contribution pension

29 days annual leave plus bank holiday

Ride to work and EV car scheme

Job summary

The University of Manchester invites applications for a Research Associate to join a team investigating electrical and optical characterisation of defects in high aluminium content AlGaN, aiming to improve UVC LED efficiency. You will apply DLTS and photoluminescence to assess defect impact on device performance.

You will analyse results, contribute to journal papers, and present findings at UK and international conferences, with travel to collaboration meetings in Cork, Ireland.

Qualifications

• We value transferable skills and real-world experience as much as formal qualifications.

Responsibilities

• The electrical and optical characterisation of defects in high aluminium content AlGaN with a view to increasing the efficiency of UVC light emitting diodes.
• Use Deep Level Transient Spectroscopy (DLTS) and photoluminescence measurements to characterise the impact of these defects on device performance.
• Analyse the data produced by these experiments and contribute to the writing of journal papers based on the results.
• Present work at academic conferences, both within the UK and overseas.
• Travel to the Tyndall institute in Cork, Ireland, for collaboration meetings.

Job description

The University of Manchester invites applications for a Research Associate to join a team investigating electrical and optical characterisation of defects in high aluminium content AlGaN, aiming to improve UVC LED efficiency. You will apply DLTS and photoluminescence to assess defect impact on device performance.

You will analyse results, contribute to journal papers, and present findings at UK and international conferences, with travel to collaboration meetings in Cork, Ireland.