Epitaxy Growth Engineer

JR United Kingdom; North East; On-site; GBP 35,000 - 50,000; Full time

Job summary

A leading company in the North East's semiconductor cluster is seeking an Epitaxy Growth Engineer. This role involves developing GaAs-based epi-wafers and contributing to the production of new GaN-based products. Ideal candidates will have a strong background in epitaxial growth physics and relevant engineering degrees.

Qualifications

• Fundamental understanding of epitaxial growth physics and associated materials science.
• Knowledge of MOCVD and/or MBE growth operations.

Responsibilities

• Support and contribute to the development of GaAs-based epi-wafers for microwave ICs.
• Participate in the development and production of GaN-based semiconductor products.

Skills

Understanding of epitaxial growth physics

Knowledge of MOCVD

Knowledge of MBE growth operations

Education

BEng in Electronic Engineering

BSc in Physics

Job description

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Job Opportunity: Epitaxy Growth Engineer

Our client is developing cutting-edge, next-generation compound semiconductors and is a leader within the North East’s emerging semiconductor cluster. They are seeking an Epitaxy Growth Engineer to support the technology development and growth of GaAs-based epi-wafers for monolithic microwave integrated circuit products. The role will also involve participating in the development and future production of new GaN-based products.

Responsibilities:

• Support and contribute to the development of GaAs-based epi-wafers for microwave ICs.
• Participate in the development and production of GaN-based semiconductor products.

Requirements:

• Fundamental understanding of epitaxial growth physics and associated materials science.
• Knowledge of MOCVD and/or MBE growth operations.
• BEng, BSc in Electronic Engineering, Physics, or equivalent.

Applicants must have the right to work in the UK.

Please contact Rachel Anderson for further details.