Postdoctoral fellow: design of GaN power devices and integrated functions (M/F)

CNRS; France; Sur place; EUR 20 000 - 40 000; Plein temps

Résumé du poste

A leading research organization in France is seeking a Full-time Researcher to design GaN power components aimed at next-generation energy systems. This role involves numerical analyses, collaboration with project partners, and characterizing innovative components. Applicants should hold a Master's degree in a relevant field and be proficient in simulation tools. Fluency in both French and English is essential. The position is part of a collaborative research project funded for 12 months, with a starting date of February 2, 2026.

Qualifications

• Master's degree in Engineering Physics or related field.
• Experience with simulation tools such as SPICE and Cadence.
• Familiarity with numerical simulation techniques.

Responsabilités

• Design GaN power components with integrated functionalities.
• Conduct numerical analyses to evaluate trade-offs.
• Collaborate with project partners for architecture design.

Connaissances

Simulation tools (SPICE, VHDL, Cadence)

Numerical simulation (Comsol, TCAD, Silvaco)

Knowledge in transistor characterization

Teamwork aptitude

Fluency in French and English

Formation

Master's degree in relevant field

Outils

Matlab

Python

Description du poste

Organisation/Company CNRS Department Laboratoire plasma et conversion d'énergie Research Field Engineering Physics Technology Researcher Profile First Stage Researcher (R1) Country France Application Deadline 1 Jan 2026 - 23:59 (UTC) Type of Contract Temporary Job Status Full-time Hours Per Week 35 Offer Starting Date 2 Feb 2026 Is the job funded through the EU Research Framework Programme? Not funded by a EU programme Is the Job related to staff position within a Research Infrastructure? No

Offer Description

As part of the “VERTIGO” electronics PEPR, which brings together 8 leading academic bodies (France 2030), the VERTIGO project aims to develop a new generation of power components based on a GaN semiconductor, with unique functionalities and performance. Advanced power electronics technologies are at the heart of the next generation of energy systems. Silicon is a well-established semiconductor material that has been meeting power conversion requirements for over 50 years. However, it is widely recognized that a real improvement in power electronics will be achieved by employing devices based on wide-bandgap semiconductor materials. Wide-bandgap semiconductor materials offer superior electrical characteristics to silicon for power devices. Power electronic devices based on wide-bandgap semiconductors will significantly improve the performance of power electronic systems by offering higher blocking voltages, increased efficiency and reliability (higher performance/cost ratio), and reduced thermal requirements, leading to more efficient green electronic systems. Among these materials, the aim here is to design new functionalities integrated within Gallium Nitride (GaN) vertical components.

The scientific objectives of this position are summarized in one main task: to design GaN power components with their integrated functionalities.

In close collaboration with the project consortium, the different devices will be studied using 1D and 2D finite element analyzes (e.g. TCAD Sentaurus, Silvaco). Numerical analyzes will evaluate trade-offs between electrical performance of the power core and integrated functions, manufacturing parameters, and geometric parameters (e.g., gate length, gate-to-drain and gate-to-drain distances). source, critical dimensions and safety margins). Particular attention will be paid to the parasitic elements and couplings of the integration in order to evaluate as early as possible the switching performance and the best compromises between component parameters, conduction and switching losses. The different architectures will be evaluated in terms of electrical performance and manufacturing complexity (number of manufacturing processes and dispersion tolerance). The best architectures will be designed (mask layout), in close collaboration with the French partners of the consortium. In addition to this design work, which represents the majority of the work, the recruited person will participate in characterization campaigns for innovative GaN components, in order to take experimental constraints into consideration in the design.

This position is funded by a French collaborative research project PEPR électronique “VERTIGO”: Transistors for power electronics using a vertical geometry to gain in current density and accompany voltage rise. This 48-month project began in 2022, and is coordinated by CEA (Grenoble) and the AMPERE laboratory (Lyon). The postdoctoral position is funded for 12 months.

The Laplace (Plasma and Energy Conversion Laboratory) is a UMR under the auspices of CNRS, INP-Toulouse and UPS. The laboratory employs over 300 people and represents the largest concentration of research in electrical engineering and plasma in France. In particular, it is the only one to cover the “Plasma/materials/systems” continuum in an integrated manner. The CS group is made up of 35 full-time equivalents, and the main investigations are focused on original concepts for associations of overlapping and/or magnetically coupled switching cells in parallel, giving rise to complex circuits with often highly branched topologies. The research and technologies thus developed address both new energy management functionalities and high-performance applications in terms of waveform quality, compact filtering and three-dimensional integration at high specific power.

• Master simulation tools such as SPICE, VHDL(-AMS), Cadence, as well as calculation and modeling tools such as Matlab/Octave or Python. Skills in finite-element type numerical simulation will be a plus (e.g. Comsol, TCAD, Silvaco).
• Knowledge of transistor characterization issues and methodologies in wide-signal switching regimes.
• In-depth knowledge of electronics, ideally in transistor modeling and power components with large gap and/or ultra-large gap materials.
• Demonstrate an aptitude for teamwork and collaborative project work, in particular through previous experience of active participation in such a project.
• Be fluent in French and English.