R&D Power Semiconductor Chip Engineer 80 – 100% (f/m/d)

3M HEALTHCARE

Lenzburg

Vor Ort

CHF 110.000 - 170.000

Vollzeit

14 Tage+
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Zusammenfassung

Hitachi Energy Semiconductors is seeking an experienced R&D Semiconductor Chip Specialist to advance next‑generation power devices, with a focus on silicon power diodes and expansion to IGBTs and MOSFETs. You will drive modeling, validation, and reliability assessment across the design‑to‑production cycle.

The ideal candidate holds a Master’s or PhD in Physics or Electrical Engineering, has hands‑on TCAD experience (Sentaurus/COMSOL), strong device physics knowledge, and excellent English

Qualifikationen

  • Master’s or PhD in Physics, Electrical Engineering, or a related field with a focus on semiconductor device physics.
  • Proven experience in power semiconductor device development, ideally with exposure to silicon power diodes.
  • Strong hands-on experience with TCAD simulation tools (e.g., Sentaurus, COMSOL).
  • Good understanding of semiconductor device physics, characteristics, and technology development processes.
  • Experience in cross-functional collaboration with process, characterization, and reliability teams.
  • Initial experience owning technical tasks or supervising junior profiles is a plus.
  • Familiarity with process integration aspects or modeling approaches is considered an advantage.
  • Self‑driven, analytical, and eager to learn and grow in a high‑performance R&D environment.
  • Proficiency in English with strong communication and presentation skills.

Aufgaben

  • Contribute to the development of next‑generation power semiconductor chips, with a focus on silicon power diodes and related device technologies.
  • Support the end‑to‑end technology and product development cycle, from concept and simulation through to validation and reliability assessment.
  • Apply and further develop TCAD simulation models to understand device behavior and optimize performance, yield, and cost.
  • Collaborate closely with process engineers, characterization and reliability teams to align design with manufacturability.
  • Take ownership of individual work packages or sub‑projects, contributing to overall project goals and timelines.
  • Drive continuous improvement through data‑driven analysis, modeling, and optimization approaches.
  • Actively contribute to knowledge sharing within the team and build a strong systems‑level understanding of semiconductor devices and processes.

Kenntnisse

TCAD tools experience
English communication
Analytical mindset
Self-driven

Ausbildung

Master’s or PhD in Physics or Electrical Engineering

Tools

Sentaurus
COMSOL

Jobbeschreibung

Overview

In our R&D BiMOS semiconductor chip groups at Hitachi Energy Semiconductors, we are developing advanced power semiconductor devices across multiple voltage classes. Our high‑quality products are manufactured at internal and external production sites and delivered to customers worldwide across a wide range of applications, including industrial, renewable energy, traction, and e‑mobility. We are looking for a motivated R&D Semiconductor Chip Specialist to contribute to the development of next‑generation power semiconductor technologies, focusing primarily on silicon power diodes and expanding to IGBTs and MOSFETs.

Responsibilities
  • Contribute to the development of next‑generation power semiconductor chips, with a focus on silicon power diodes and related device technologies.
  • Support the end‑to‑end technology and product development cycle, from concept and simulation through to validation and reliability assessment.
  • Apply and further develop TCAD simulation models to understand device behavior and optimize performance, yield, and cost.
  • Collaborate closely with process engineers, characterization and reliability teams to align design with manufacturability.
  • Take ownership of individual work packages or sub‑projects, contributing to overall project goals and timelines.
  • Drive continuous improvement through data‑driven analysis, modeling, and optimization approaches.
  • Actively contribute to knowledge sharing within the team and build a strong systems‑level understanding of semiconductor devices and processes.
Qualifications
  • Master’s or PhD in Physics, Electrical Engineering, or a related field with a focus on semiconductor device physics.
  • Proven experience in power semiconductor device development, ideally with exposure to silicon power diodes.
  • Strong hands‑on experience with TCAD simulation tools (e.g., Sentaurus, COMSOL).
  • Good understanding of semiconductor device physics, characteristics, and technology development processes.
  • Experience in cross‑functional collaboration with process, characterization, and reliability teams.
  • Initial experience owning technical tasks or supervising junior profiles is a plus.
  • Familiarity with process integration aspects or modeling approaches is considered an advantage.
  • Self‑driven, analytical, and eager to learn and grow in a high‑performance R&D environment.
  • Proficiency in English with strong communication and presentation skills.
EEO Statement

Qualified individuals with a disability may request a reasonable accommodation if you are unable or limited in your ability to use or access the Hitachi Energy career site as a result of your disability. You may request reasonable accommodations by completing a general inquiry form on our website and including your contact information and specific details about your required accommodation to support you during the job application process. This is solely for job seekers with disabilities requiring accessibility assistance or an accommodation in the job application process. Messages left for other purposes will not receive a response.

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