Laser Design Lead

Cross International; Oost-Vlaanderen; Sur place; EUR 70 000 - 100 000; Plein temps

Avantages offerts par ce poste

Relocation assistance

Ghent on-site role

Résumé du poste

Cross International in Ghent, Belgium is seeking a senior engineer to shape laser technology for high‑power, efficient diodes and integrated photonics. You will lead epitaxial design, device simulations and collaboration with foundries in a fast‑moving startup environment.

Join an ambitious deep‑tech team with international reach and be responsible for defining milestones, testing strategies and scalable manufacturing pathways as the company grows.

Qualifications

• Master's degree in Electrical Engineering, Photonics, Semiconductor Physics or related field.
• PhD in III‑V devices, laser physics or similar is a strong asset.
• At least three years of industrial experience in laser design, preferably in datacom or telecom.
• Strong expertise in epitaxial design and laser device simulation.
• Solid understanding of electro‑optical device physics.
• Experience with semiconductor laser design (DFB lasers).

Responsabilités

• Own the design of the laser device cross-section and epitaxial layer design for high power and efficiency.
• Perform device simulation and layout of amplifiers and lasers, including DFB lasers.
• Coordinate tape-outs and support design-to-fabrication transitions.
• Create short experimental learning cycles covering fabrication, testing and design improvements.
• Translate product specs into clear development milestones.
• Establish collaborations with external foundries and research organisations for growth and fabrication.
• Help develop scalable manufacturing supply chain and support future foundry transfer.
• Co‑define testing strategy from laser devices to integrated photonic ICs.

Connaissances

Epitaxial design

Laser device simulation

Electro-optical device physics

Semiconductor laser design (DFB)

Start-up dynamics

Formation

Master's degree in Electrical Engineering or Photonics

PhD in III‑V devices or laser physics (asset)

Outils

PIC assembly

Laser facet coatings

Silicon photonics

Description du poste

Join a promising deep-tech company at a pivotal stage in its growth journey!

Our client is an innovative technology start-up based on both the Ghent and Silicon Valley. They operate at the intersection of photonics, semiconductors and artificial intelligence. The company develops advanced light engines for optical interconnects in data centers. As AI continues to expand rapidly, the demand for faster and more energy-efficient data transmission is increasing exponentially, creating a strong international market opportunity for its technology.

The company is led by experienced founders with strong technological, business and academic backgrounds and is currently building its core team. As a spin-out from the Photonics Research Group, the company leverages world-leading position in integrated photonics at imec & Ghent University. Research, development and prototyping are based in Ghent. The company's ambitions and future market reach are distinctly international with business and product management lead from California.

You will join an entrepreneurial start-up environment with short decision lines and the opportunity to make a visible impact from day one. This is a unique chance to help shape both the technology and the organisation as they grow.

Your impact:

You will:

• Own the design of the laser device cross-section, including epitaxial layer design for high optical power and conversion efficiency in III‑V materials such as InP and GaAs
• Perform device simulation, design and layout of amplifiers and lasers, including DFB lasers
• Coordinate device tape‑outs and support the transition from design to fabrication
• Create short experimental learning cycles, covering fabrication, testing and design improvements
• Translate final product specifications into clear and incremental development milestones
• Establish collaborations with external foundries and research organisations for epitaxial growth and device fabrication
• Help develop a scalable manufacturing supply chain and support the future transfer to a dedicated foundry
• Co‑define the testing strategy from individual laser devices to fully integrated photonic ICs
• Determine whether testing capabilities should be built internally, purchased or subcontracted
• Work closely with experts in silicon photonics and heterogeneous integration to optimise the integration of III‑V materials into silicon photonics

Your profile:

You hold a Master’s degree in Electrical Engineering, Photonics, Semiconductor Physics or a related field. A PhD in III‑V devices, laser physics or a similar domain is a strong asset.

In addition, you bring:

• At least three years of industrial experience in laser design, ideally within datacom or telecom
• Strong expertise in epitaxial design and laser device simulation
• A solid understanding of electro‑optical device physics
• Experience with semiconductor laser design, such as DFB lasers
• A hands‑on and pragmatic approach to technology development
• The flexibility and can‑do mindset required in a fast‑moving start‑up environment

Experience with PIC assembly, laser facet coatings, laser reliability, silicon photonics or III‑V foundries would be a valuable advantage.

This is a unique opportunity to join an ambitious deep‑tech company at a pivotal stage of its development. You will have the freedom to shape the laser technology, influence key technical decisions and help build the foundations of a future international technology company.

The preferred location for this role is Ghent, Belgium, with an on‑site presence. Relocation can be discussed.