Sensors and microelectromechanical systems for missions to hot planets

ORAU; Pasadena (CA); On-site; USD 70,000 - 90,000; Full time

Job summary

ORAU in Pasadena, California is offering a unique opportunity through the NASA Postdoctoral Program. This fellowship is geared towards talented scientists looking to engage in cutting-edge research projects. The focus of this position is on developing sensor technology utilizing gallium nitride (GaN) for high-temperature applications in planetary exploration.

Candidates must possess a Doctoral Degree and are encouraged to apply if they meet the eligibility requirements listed. The role offers the chance to advance NASA's missions in various scientific domains.

Qualifications

• Eligibility is for U.S. Citizens, U.S. Lawful Permanent Residents, and eligible foreign nationals.

Responsibilities

• Develop temperature-stable sensors and micro-instruments using GaN technology.
• Conduct research on GaN-based platforms for planetary exploration.

Education

Doctoral Degree

Job description

Organization
National Aeronautics and Space Administration (NASA)

Reference Code
0178-NPP-NOV26-JPL-PlanetSci

How To Apply
All applications must be submitted in Zintellect. Please visit the NASA Postdoctoral Program website for application instructions and requirements: How to Apply | NASA Postdoctoral Program (orau.org). A complete application to the NASA Postdoctoral Program includes:

• Research proposal
• Three letters of recommendation
• Official doctoral transcript documents

Application Deadline
11/1/2026 6:00:59 PM Eastern Time Zone

Description

The NASA Postdoctoral Program (NPP) offers unique research opportunities to highly‑talented scientists to engage in ongoing NASA research projects at a NASA Center, NASA Headquarters, or at a NASA‑affiliated research institute. These one‑to‑three‑year fellowships are competitive and are designed to advance NASA’s missions in space science, Earth science, aeronautics, space operations, exploration systems, and astrobiology.

In recent years we have seen rapid growth of III‑V semiconductors geared towards a variety of applications where silicon performance falls short. Gallium nitride (GaN), a III‑V semiconductor, is the material of choice for high‑frequency, high‑power, and high‑temperature applications. GaN also offers a number of excellent mechanical properties, making it suitable for MEMS. Particularly, GaN and its related material family are interesting for harsh‑environment applications. Beyond Earth, GaN‑based microsystems can enable low‑cost and long‑lasting planetary exploration missions to hot planets. The research objective is to develop a sensor technology platform that is temperature‑ and radiation‑tolerant using gallium nitride MEMS technology. In this specific project the postdoc will help develop temperature‑stable sensors and micro‑instruments working at 500 °C using GaN‑based acoustic and micromechanical components.

References:

M. Rais‑Zadeh, D. Weinstein, “Gallium Nitride for M/NEMS”, Book chapter in Piezoelectric MEMS Resonators, pp. 73‑98, 2017.
M. Rais‑Zadeh, et al., “Gallium Nitride as an electromechanical material”, J. of Microelectromechanical Microsystems, vol. 23, issue 6, pp. 1252‑1271, 2014.

Location
Jet Propulsion Laboratory, Pasadena, California

Field of Science
Planetary Science

Advisors
Mina Rais‑Zadeh
[e-mail]
626‑460‑9989

Eligibility Requirements

• Degree: Doctoral Degree.
• Eligibility is currently open to: U.S. Citizens; U.S. Lawful Permanent Residents (LPR); Foreign Nationals eligible for an Exchange Visitor J‑1 visa status; Applicants for LPR, asylees, or refugees in the U.S. at the time of application with a valid EAD card and I‑485 or I‑589 forms in pending status.
• Applications with citizens from Designated Countries will not be accepted at this time, unless they are Legal Permanent Residents of the United States. A complete list of Designated Countries can be found at: https://www.nasa.gov/oiir/export-control.

Questions about this opportunity? Please email [e-mail]

Point of Contact
Mikeala