Senior Principal Engineer

Renesas; San Jose (CA); On-site; USD 239,000 - 299,000; Full time

Job summary

Renesas is seeking a Power Design Engineer to lead test-vehicle development for high-current BCD and LV GaN processes. You will define architectures, design power stages, and drive characterization from concept to silicon bring-up.

Collaboration with process, product, and applications teams is essential. The role requires 10+ years in power electronics, deep knowledge of topologies and device physics, and experience with test structures and layout for high-current switching.

Qualifications

• 10+ years of hands-on design experience in power semiconductors, analog/power ICs, or power electronics.
• Solid understanding of power device physics and tradeoffs across BCD and GaN technologies.
• Experience designing test structures or test chips/vehicles for process technology development.
• IC-level design and parasitic-aware layout for high-current switching nodes.
• Ability to span die to module/board level including packaging considerations.

Responsibilities

• Define, design, and drive execution of test vehicles for high-current BCD and LV GaN process technologies.
• Translate process capability targets and product roadmap requirements into test vehicle architecture and specs.
• Design and simulate power stage circuits (buck, boost, multiphase, half-bridge) for device validation.
• Select and characterize power devices for inclusion in test structures with layout tradeoffs.
• Perform IC-level layout for test structures with focus on parasitic effects.
• Extend designs to module/package level with PCB layout and thermal/electrical co-design.
• Develop test and characterization plans covering DC, switching, efficiency and transient response.
• Lead or support silicon bring-up, debug, and correlation of results with simulations.
• Collaborate cross-functionally to close data loops from process split data to product specs.
• Document design methodology and results for technology qualification.

Skills

Power design

Test vehicles

IC/module design

Power topology knowledge

Lab skills

Parasitic-aware layout

Education

Bachelor's or Master's degree in Electrical Engineering

Tools

SPICE

TCAD

Job description

• Compensation: USD 239,000 - USD 299,000 - yearly

Job Description

We are seeking a Power Design Engineer to lead the development of test vehicles supporting our high-current BCD (Bipolar-CMOS-DMOS) and low-voltage GaN power process and product portfolios. This role owns test vehicle definition, circuit and layout design, and characterisation planning from concept through silicon bring-up, working closely with process development, product engineering, and applications teams. The ideal candidate has hands‑on experience designing power devices and circuits at both the IC and module level, and is fluent in the power topologies these test vehicles are ultimately intended to support.

Key Responsibilities

• Define, design, and drive execution of test vehicles (TVs) for high-current BCD and LV GaN process technologies, including device test structures, scaled power stages, and full‑function demonstration circuits.
• Translate process capability targets and product roadmap requirements into test vehicle architecture and specifications.
• Design and simulate power stage circuits (e.g., synchronous buck/boost, multiphase, half‑bridge/DrMOS, gate drivers) used to validate device performance under realistic switching and thermal conditions.
• Select and characterise power devices (LDMOS, trench MOSFETs, LV GaN HEMTs, Schottky/sync rectifiers) for inclusion in test structures, working with device/process engineering on layout‑dependent tradeoffs (RDS(ON), Qg, breakdown voltage, SOA).
• Perform IC‑level layout and design for test structures, including parasitic‑aware layout for switch nodes, current sensing, and gate drive paths.
• Extend designs to module/package level as needed — co‑design of power stages with packaging, magnetics, and PCB layout for evaluation boards and system‑level test vehicles.
• Develop test and characterisation plans covering DC parametrics, switching performance, efficiency, transient response, and voltage/current stress margins (including switch‑node ringing and abs‑max validation).
• Lead or support silicon bring‑up, debug, and correlation of measured results against simulation and design targets.
• Collaborate cross‑functionally with process integration, reliability, product/applications engineering, and test engineering to close the loop from process split data to product‑ready specifications.
• Document design methodology, test vehicle results, and characterisation data to support technology qualification and product development decisions.

Qualifications

• Bachelor's or Master's degree in Electrical Engineering, Microelectronics, or related field.
• 10+ years of hands‑on design experience in power semiconductor devices, analog/power ICs, or power electronics.
• Strong working knowledge of power conversion topologies (e.g., buck, boost, multiphase/interleaved converters, half‑bridge, DrMOS/Intelli‑Phase‑style architectures) and how topology choices drive device requirements.
• Solid understanding of power device physics and tradeoffs across BCD process technologies and GaN (particularly low‑voltage GaN HEMTs) — including RDS(ON), switching loss, gate charge, breakdown/avalanche behavior, and thermal characteristics.
• Demonstrated experience designing test structures or test chips/vehicles for process technology development (not just product design) — comfortable defining what a process node needs to prove out.
• IC‑level design and layout experience, including parasitic‑sensitive layout practices for high‑current switching nodes.
• Experience taking designs beyond the die level to module, package, or board level (e.g., power module co‑design, evaluation board layout, thermal/electrical co‑design).
• Proficiency with circuit simulation tools (SPICE or equivalent) and familiarity with device/TCAD simulation concepts.
• Ability to interpret and specify absolute maximum ratings, transient voltage tolerance, and protection thresholds (OVP/UVP/OCP/OTP) relevant to power stage reliability.
• Strong lab skills: bring‑up, debug, and characterisation using oscilloscopes, curve tracers, power analyzers, and thermal imaging.

Additional Information

Renesas is an embedded semiconductor solution provider driven by its Purpose, To Make Our Lives Easier. With a global team of over 21,000 engineers and problem solvers in more than 30 countries, we offer the opportunity to work on world‑leading technology for Automotive, Industrial, Infrastructure, and IoT, shaping a safer, healthier, greener, and smarter future.

At Renesas, TAGIE is our culture, grounded in being Transparent, Agile, Global, Innovative, and Entrepreneurial. It shapes how we work, grow and deliver on our purpose together. This collaborative spirit and mindset drive our semiconductor technology to transform industries and impact millions of lives.

We believe in rewarding our employees with a competitive benefits package alongside their salary. More information will be provided during the hiring process.

Are you ready to join our team and shape the future with us?

Renesas Electronics is an equal opportunity and affirmative action employer, committed to supporting diversity and fostering a work environment free of discrimination on the basis of sex, race, religion, national origin, gender, gender identity, gender expression, age, sexual orientation, military status, veteran status, or any other basis protected by law. For more information, please read our Diversity & Inclusion Statement .

Renesas Electronics deals with dual‑use technology that is subject to U.S. export controls regulations. Under these regulations it may be necessary for Renesas to obtain U.S. government export license prior to release of technology to certain persons. The decision whether or not to file or pursue an export license application is at the sole discretion of Renesas.