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Texas State University is seeking a Postdoctoral Research Fellow to join the Ultrawide Bandgap Semiconductor Lab. You will advance research on diamond, III-nitrides, and Ga2O3, focusing on epitaxy, processing, and device concepts for high-power and high-frequency electronics.
The role involves experimental work, collaboration across engineering and materials science, publication, and contributing to grant proposals while mentoring students as funds permit.
Texas State University is a doctoral-granting institution with high research activity, dedicated to advancing innovation and expanding the frontiers of research. Our Ultrawide Bandgap Semiconductor (UWBG) lab focuses on developing next-generation UWBG materials and process technologies based on diamond, III-nitrides, and Ga₂O₃ for high-power, high-frequency, and extreme-environment electronics. Our research integrates advanced thin-film growth, laser-based processing, doping strategies, and interface engineering to enable energy-efficient, radiation-hardened, and thermally robust electronic systems, with applications spanning power electronics, space systems, and national defense technologies.
Under the Nathinal Science Foundation and Department of Defense grants, we are seeking a highly motivated and talented Postdoctoral Research Fellow to join our UWBG Semiconductor Lab. The successful candidate will work on cutting-edge research projects focused on ultrawide bandgap materials (e.g., diamond, III-nitrides, and Ga₂O₃), advancing next-generation electronic devices through innovations in thin film epitaxy, doping, interface engineering, and laser-based processing to achieve superior performance, thermal management, and energy efficiency in high-power and high-frequency applications.
This position is subject to the availability of funds.