Intern - Advanced DRAM Cell & Device Technology

Micron Technology, Inc.; Boise (ID); On-site; USD 30,000 - 47,000; Part time

Benefits offered by this job

Health insurance

Paid time off

Paid holidays

Retirement plan

Job summary

Micron Technology, Inc. in Boise, Idaho invites an intern to join the Advanced DRAM Device & Cell Technology team to contribute to development and characterization of future DRAM cell and access device technologies through experiments, data analysis, and collaboration with multidisciplinary engineers.

This role blends semiconductor device physics, materials engineering, silicon experimentation, electrical characterization, and data-driven decision making to improve cell performance, density,

Qualifications

• Pursuing an M.S. or Ph.D. in Electrical Engineering, Materials Science, Applied Physics, Chemical Engineering, or related field; cannot graduate before Sept 2027.
• Demonstrated understanding of semiconductor fundamentals including device physics, materials science, and characterization techniques.
• Experience with electrical characterization, device testing, statistical analysis, and interpretation of experimental data sets.
• Familiarity with DRAM concepts including activation, sensing, retention, and disturb mechanisms.

Responsibilities

• Support evaluation of DRAM devices, capacitors and cell stack elements through characterization and data analysis.
• Design and implement silicon experiments; perform electrical, physical, and materials characterization with statistical analysis.
• Analyze device- and array-level behavior including sensing margins and retention performance.
• Collaborate with modeling, design, process integration, and manufacturing teams to optimize technology.
• Apply AI-assisted tools to enhance data analysis and decision-making.

Skills

Python

Data analysis

Statistical analysis

Electrical characterization

Education

M.S. or Ph.D. in Electrical Engineering

M.S. or Ph.D. in Materials Science

M.S. or Ph.D. in Applied Physics

Tools

Python

MATLAB

JMP

Job description

Our vision is to transform how the world uses information to enrich life for all.

Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.

At Micron's Boise R&D site, the DRAM Technology Development organization drives innovation in next-generation memory solutions. The team develops advanced DRAM cell architectures, access devices, materials systems, and integration technologies that enable future scaling, improved performance, enhanced reliability, and manufacturing readiness. Engineers work across device, materials, process integration, modeling, design, and product engineering teams to bring groundbreaking memory technologies from concept to production.

As an intern in the Advanced DRAM Device & Cell Technology team, you will contribute to the development and characterization of future DRAM cell and access device technologies through experimental studies, data analysis, and collaboration with multidisciplinary engineering teams. This position combines semiconductor device physics, materials engineering, silicon experimentation, electrical characterization, and data-driven decision making to improve cell performance, density, retention, reliability, and manufacturability. The successful candidate will collaborate with multi-functional teams to evaluate novel materials, device architectures, and integration schemes supporting future memory technology development.

Responsibilities

• Support the evaluation of DRAM access devices, capacitors, and cell stack elements through characterization, data analysis, and assessment of new device architectures, materials systems, and integration schemes.
• Design and implement silicon experiments; perform electrical, physical, and materials characterization along with statistical analysis to find opportunities for device, process, and design improvements.
• Analyze device- and array-level behavior including sensing margins, activation characteristics, disturb mechanisms, retention performance, leakage behavior, and read/write operation interactions.
• Collaborate with modeling, design, process integration, and manufacturing teams to understand device behavior, support technology optimization, and contribute to technology development activities.
• Apply AI-Assisted and Generative AI tools, where appropriate, to enhance data analysis, workflow efficiency, and technical decision-making.

Minimum Qualifications

• Currently pursuing an M.S. or Ph.D. in Electrical Engineering, Materials Science, Applied Physics, Chemical Engineering, or a related technical field. Cannot graduate prior to September 2027.
• Demonstrated understanding of semiconductor fundamentals, including device physics, materials science, characterization techniques, and concepts relevant to advanced memory technologies.
• Experience with electrical characterization, device testing, statistical analysis, and interpretation of experimental or simulation data sets.
• Familiarity with DRAM operational concepts, including activation, sensing, retention, and disturb mechanisms.
• Proficiency with data analysis and scripting tools such as Python, MATLAB, JMP, or similar platforms, along with familiarity with AI-assisted engineering and data analysis tools.

Preferred Qualifications

• Experience in DRAM or NAND device development, characterization, or technology research.
• Hands-on experience with semiconductor materials characterization, process development, thin film engineering, interface engineering, TCAD simulation, and/or advanced memory technology research.
• Knowledge of semiconductor fabrication processes, advanced BEOL integration, reliability mechanisms, and device variation analysis.
• Experience conducting independent research projects and effectively communicating technical results to diverse audiences.
• Experience using AI, Large Language Models (LLMs), AI-enabled analytics, or AI-supported engineering workflows to improve research productivity and technical insights.

Micron benefits are designed to help you stay well, provide peace of mind and help you prepare for the future.

• We offer a choice of medical, dental and vision plans in all locations enabling team members to select the plans that best meet their family healthcare needs and budget.
• Micron also provides benefit programs that help protect your income if you are unable to work due to illness or injury, and paid family leave.
• Micron benefits include a robust paid time-off program and paid holidays.

For additional information regarding the Benefit programs available, please see the Benefits Guide posted on micron.com/careers/benefits.

Micron is proud to be an equal opportunity workplace and is an affirmative action employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, age, national origin, citizenship status, disability, protected veteran status, gender identity or any other factor protected by applicable federal, state, or local laws.

For US Sites Only: To request assistance with the application process and/or for reasonable accommodations, please contact Micron's People Organization at [e-mail] or 1-800-336-8918 (select option #3).

Micron Prohibits the use of child labor and complies with all applicable laws, rules, regulations, and other international and industry labor standards.

Micron does not charge candidates any recruitment fees or unlawfully collect any payment from candidates as consideration for their employment with Micron.