III-V Device Design Engineer for Silicon Photonics Integration

Work Options Group; Temecula (CA); On-site; USD 120,000 - 150,000; Full time

Job summary

Skorpios Technologies, Inc. is seeking an experienced III-V Device Design Engineer to develop next-generation Si Photonics chip products. This role involves designing high-performance devices like lasers and modulators, utilizing advanced simulations and testing. Candidates should have over 10 years of experience, preferably with a Ph.D. in a relevant field, and extensive knowledge in photonics device design. Ideal candidates will thrive in a dynamic environment and possess both strong technical and communication skills.

Qualifications

• 10+ years' experience in device design and characterization.
• Deep understanding of lasers, MZM, photodiodes, and EAM devices.
• Solid understanding of epitaxy constraints and quantum effects.

Responsibilities

• Design, model, and simulate high-efficiency laser and modulators.
• Perform impedance matching over large frequency ranges.
• Establish tolerance and process design rules for designs.

Skills

III-V and RF design circuitry skills

Problem-solving and troubleshooting skills

Proficiency with Microsoft Excel

Proficiency with software design tools (Ansys Lumerical, Zemax, Speos)

Good communication skills

Education

M.S. or Ph.D. in Physics, Electrical Engineering, or Material Science

Tools

Ansys Lumerical

Zemax

Speos

JMP

Mini-Tab

Job description

Description

Skorpios Technologies, Inc., an innovator in heterogeneous integration of silicon photonic technology and semiconductor development, is rapidly expanding. We are in search of a top-level III-V Device Design Engineer for developing next‑generation Si Photonics chip and module products. This is an opportunity to work with a highly motivated, high performance technical team on highly differentiated, disruptive technology.

The III-V Device Design Engineer for Silicon Photonics integration role is responsible for supporting the development of next generation Si-Photonic Data Communications solutions in Skorpios’ Integration and Process Development Engineering team. The III-V Device Design Engineer will develop high performance III‑V devices including high‑power and high‑efficiency laser, EAM and MZM high‑speed modulators, and uni‑traveling carrier high‑speed photodetectors. The design must be tailored for our unique technology platform and optimized for meeting challenging specs. The tasks include electrical, RF, and optical simulations; design for fabrication and testing; design review; working with layout engineers; characterization of devices; data analysis; and performance reporting.

Responsibilities

• Design, model and simulate high‑efficiency laser, EAM and MZM high‑speed modulators, uni‑traveling carrier high‑speed photodetectors.
• Model and simulate resistance and capacitance effects from EAM and MZM modulators, photodiodes and laser diodes to provide improved RF performance of the components into integrated circuits.
• Perform impedance matching over large frequency ranges.
• Establish tolerance and process design rules to enable DRC for designs and layouts.
• Direct HPIC layout of designed components.
• DOE design and design validation testing.
• Design review support and presentation.
• Design for manufacturability (DFM).
• Establish schematics designs for layout.
• Use computer software to design III‑V components and optimize for RF performance of optical to electrical conversion efficiency.
• RF device testing and electrical/optical s‑parameter measurement and characterization.

Competencies

• Ability to work in an integrated and diverse team environment.
• Ability to work with a large body of data and the necessary statistical analysis tools, and the ability to present the data and ideas to a diverse audience.
• Good communication skills.
• Ability to present complex problems to internal peers as well as potential customers.
• III‑V and RF design circuitry skills.
• Problem‑solving and troubleshooting skills.
• Proficiency with Microsoft Excel.
• Proficiency with software design tools like Ansys Lumerical, Zemax, and Speos, JMP or Mini‑Tab.
• Interpersonal, verbal and written communication skills.

Requirements

• 10+ years' experience.
• M.S. or Ph.D. in Physics, Electrical Engineering, Material Science or a related field with emphasis in optical communications and high‑speed optical III‑V components.
• Deep understanding of lasers, MZM, photodiodes and EAM devices is a must.
• Extensive industrial experience in photonics (Si or III‑V) device design and characterization preferred, with a proven track record of success from concept to manufacturing; alternatively, a PhD graduate who has done outstanding research work on directly related devices may be accepted for the position.
• Solid understanding of epitaxy constraints, band structures, quantum effects, carriers' diffusion, optical modes for optical communications.
• Understanding how to design various III‑V devices, including high‑power and high‑efficiency lasers, EAM and MZM high‑speed modulators, uni‑traveling carrier high‑speed photodetectors.
• Proficiency in design and simulations for III‑V active photonic devices.
• Familiarity with optoelectrical device characterization and analysis.
• Familiarity with component reliability concepts.
• Ability to work with processing engineers to define fabrication methods.
• Strong problem‑solving skills with a demonstrated track record.
• Ability to work hard in a dynamic start‑up environment.
• Thrives in a fast‑paced environment.
• Excellent verbal and writing communication skills.

Preferred Education And Experience

• Desired are candidates with significant industrial experience in the III‑V components industry.
• Ansys Lumerical, Zemax and Speos, JMP or Mini‑Tab experience preferred.

Work Authorization/Security Clearance Requirements

Authorization may be required to release covered technology to employees who are not U.S. citizens, U.S. nationals, lawful permanent residents, asylees, or refugees.