GaN RF Power Amp Design Intern: Hands-On Lab

MACOM; Morgan Hill (CA); Hybrid; USD 28,000 - 65,000; Full time

Job summary

MACOM’s Morgan Hill Design Center seeks a RF Power Amplifier Design Intern to work with a team of RF engineers on GaN transistor products for multi-market, base station and 5G applications.

You will learn handling RF devices, biasing, capturing RF data and EM simulations, and design impedance matching networks for a 50-ohm environment. Layout in AutoCAD, fabrication, assembly and RF bench tuning are part of the program.

Qualifications

• Working toward a Bachelor’s or Master’s degree in Electrical Engineering
• Strong interest in RF/microwave and semiconductor devices; coursework and/or Lab work required
• Willingness to work hands-on in the lab to test RF devices and assemble/test RF amplifiers
• Attention to detail and strong documentation skills

Responsibilities

• Work with RF engineers to design GaN transistor devices for multi-market, base station and 5G applications
• Learn impedance matching network design and layout, using MWO/ADS and AutoCAD
• Assist fabrication, assembly and tuning of RF circuits and perform measurements on the RF bench
• Present project progress and results during the intern program and poster/session events

Skills

Linear Theory

Transmission-Line

Impedance Matching

Smith Chart

ADS/MWO

EM Simulation

RF Design

Doherty PA

Lab Testing

RF Devices

Education

Bachelors or Masters in Electrical Engineering

Tools

ADS

MWO

AutoCAD

Job description

MACOM’s Morgan Hill Design Center seeks a RF Power Amplifier Design Intern to work with a team of RF engineers on GaN transistor products for multi-market, base station and 5G applications.

You will learn handling RF devices, biasing, capturing RF data and EM simulations, and design impedance matching networks for a 50-ohm environment. Layout in AutoCAD, fabrication, assembly and RF bench tuning are part of the program.