GaN Epitaxy Development Engineer

IQE PLC; Taunton (MA); On-site; USD 125,000 - 130,000; Full time

Benefits offered by this job

LTIPs

Health insurance

401k with company match

Career development

Job summary

IQE is seeking a GaN Epi Development Engineer to join our Technology Group in Taunton, MA. You will develop epitaxial growth processes for GaN-based devices, operate MOCVD reactors, and deliver recipes and data analysis to meet performance and manufacturing requirements.

The ideal candidate has at least 2 years of GaN epitaxy experience, a MS or PhD in science or engineering, strong communication, and ability to collaborate with internal teams and customers.

Qualifications

• 2+ years of GaN epitaxy experience using MOCVD.
• Strong understanding of III-N crystal growth and device performance.
• Experience with materials characterization techniques for III-N semiconductors.
• Excellent written and verbal communication with internal teams and customers.

Responsibilities

• Develop epitaxial growth processes for GaN device structures.
• Work with GaN MOCVD reactors to create growth recipes and analyze reactor output data.
• Provide technical expertise to ensure IQE products are best in class.
• Analyze product, process and materials data to identify correlations and drive improvements.
• Collaborate with process engineering and manufacturing to support NPI and customer inquiries.

Skills

GaN epitaxy

MOCVD reactors

Materials characterization

III-N growth

Communication

Education

Master's degree or PhD in Science or Engineering

Tools

MOCVD equipment

Job description

# GaN Epitaxy Development Engineer## Job Introduction**Who We Are**IQE is a leading global supplier of compound semiconductor wafers and advanced materials. As one of the only compound semiconductor epitaxy foundries with worldwide presence and scalable manufacturing, IQE drives technology growth. Our vision is to be the top provider of advanced semiconductor materials by delivering exceptional quality, service, and innovation, making us the first choice for customers. Our strength comes from our diverse, expert workforce and a culture built on integrity, accountability, excellence, teamwork, and valuing people.At IQE, we are committed to reaching Net Zero and creating a sustainable future. We actively strive to reduce our carbon footprint, invest in green initiatives, and embed sustainability into everything we do. Join us in driving meaningful change and making a lasting impact on the environment.**About the Role**The GaN Epi Development Engineer will join IQE's Technology Group and play a key role in developing epitaxial growth processes for GaN-based device structures. This position will work closely with internal engineering and manufacturing teams as well as customers to ensure IQE products meet or exceed performance, quality, and manufacturability requirements.Key Responsibilities:* Develop epitaxial growth processes for GaN-based device structures.* Work with GaN MOCVD reactors to create growth recipes and analyze reactor output data.* Provide technical expertise to help ensure IQE products are best in class.* Analyze product, process, and materials data to identify correlations with critical-to-function parameters and drive continuous improvement.* Provide technical support to internal teams and develop manufacturing specifications that support product quality and cost-effective manufacturing.* Create and manage manufacturing specifications as assigned.* Collaborate closely with local process engineering teams to ensure established processes and recipes produce state-of-the-art material.* Support new product introduction, customer inquiries, project management, and process documentation.**About You****Experience Requirements for the GaN Epi Development Engineer*** At least 2 years of experience with epitaxial growth of GaN-based semiconductors using MOCVD.* Strong understanding of III-N crystal growth equipment and the impact of epitaxial growth processes on device performance.* Proficiency with materials characterization techniques for III-N semiconductors.* Familiarity with III-N electronic and optoelectronic device fabrication and device testing.* Excellent written and verbal communication skills with the ability to effectively collaborate with internal teams and external customers.**Qualification Requirements for the GaN Epi Development Engineer:*** Master's degree or PhD in Science or Engineering is required.* Ability to work in both office and cleanroom/fab environments as required.* Ability to gown appropriately for work in a cleanroom fabrication environment.* Ability to occasionally travel by air or automobile as business needs require.**Why should you join us?**All our employees benefit from:• Long Term Incentive Plans (LTIPs)• Professional Development and career pathways• Market competitive base salaries reviewed bi-annually• Comprehensive health insurance offering medical, prescription, dental and vision coverage.• Company paid Life and Disability Insurance.• Long service awards 5, 10, 15, 20, 25 and 30 years• Values-based recognition awards• Employee Assistance Program (Free family, legal, financial and counselling support 24/7 Access)• 401k Plan with company match of up to 50% on the first 6% of the employee’s contributionsIQE is an equal opportunities employer that values diversity at all levels. All qualified applicants will receive consideration for employment without regard to race, colour, religion, sex, sexual orientation, gender identity, or national origin. Want to learn more? Contact our in-house talent Acquisition team at [e-mail]+−Leaflet | OpenStreetMap contributors### GaN Epitaxy Development Engineer* **Salary** 125000-130000* **Frequency** Annual* **Job Reference** iqe/TP/997/100* **Contract Type** Full Time* **Closing Date** 31 October, 2026* **Job Category** Technology* **Business Unit** USA* **Location** Taunton, MA, United States* **Posted on** 14 July, 2026