Senior Scientist for Ion Implantation (APM), IME

Agency for Science, Technology and Research (A*STAR); Singapore; On-site; SGD 70,000 - 90,000; Full time

Job summary

A leading research organization in Singapore is seeking an experienced individual to lead the ion implantation process within its R&D program. The role requires a Master’s or Ph.D. in a relevant field and at least 3 years of relevant experience. Responsibilities include developing implantation recipes, troubleshooting equipment, and collaborating with multidisciplinary teams to optimize semiconductor device performance. This position offers the opportunity to contribute significantly to next-generation device fabrication efforts.

Qualifications

• Minimum of 3 years of industrial experience in semiconductor device process development.
• Strong knowledge of implanter systems and troubleshooting methods.
• Familiarity with defect formation processes in semiconductors.

Responsibilities

• Utilize advanced diagnostic tools to address equipment malfunctions.
• Support ion implantation operations by creating and validating recipes.
• Collaborate with equipment vendors to enhance system performance.
• Analyze defect data to develop optimization strategies.
• Coordinate with operators to resolve equipment issues.
• Design ion implantation experiments for process innovation.

Skills

Strong proficiency in ion implantation processes

Expertise in ion channelling

Solid understanding of wide-bandgap semiconductor materials

Ability to work collaboratively across multidisciplinary teams

Adept at mentoring and transferring knowledge

Education

M.Sc. or Ph.D. in Electrical Engineering, Materials Science, Physics

Tools

Process simulation software (e.g., SRIM/TRIM, Silvaco Athena)

Job description

Institute of Microelectronics (IME) is leading an R&D program dedicated to advancing critical process modules for next-generation device fabrication. The program emphasizes innovation in key areas such as ion implantation — an essential building block for high-performance devices.

This role focuses on developing expertise and leadership in ion implantation process technology, including lattice damage control, channeling effects, and post-implant recovery. We are seeking an individual with approximately 3 years of experience in ion implantation.

The successful candidate will independently manage ion implantation processes, perform implantation simulations, and apply deep knowledge of crystallography and ion‑atom interactions. Strong understanding of implanters, thermal processing physics, beam optics, dosimetry systems, and vacuum technology is essential. The role also requires close collaboration with cross‑functional teams, technology development groups, and customers. Additionally, the candidate will contribute expertise in compound semiconductor materials and support integration efforts across other process modules.

Key Responsibilities

• Diagnose and Troubleshoot: Utilize advanced diagnostic tools and software to identify, analyze, and resolve equipment malfunctions, applying a strong understanding of ion implanter system functionality.
• Process Development: Support on‑site ion implantation operations by creating, executing, and characterizing implantation recipes for validation, ensuring optimal dopant profiles and superior damage recovery.
• Vendor Collaboration: Work closely with equipment vendors to enhance system performance, improve process stability, and minimize tool downtime.
• Defect Analysis: Analyze implant‑induced defect formation data to quantify impacts on device performance and develop strategies for defect reduction and process optimization.
• Operational Support: Review work orders and coordinate with equipment operators to diagnose and resolve equipment issues, identifying both mechanical and human factors contributing to failures.
• Experimental Design: Design and execute ion implantation experiments across a range of doses, energies, tilt, and twist angles to support process innovation and device performance enhancement.

Job Requirements

• M.Sc. or Ph.D. in Electrical Engineering, Materials Science, Physics, or a related field.
• Minimum of 3 years of industrial experience in semiconductor device process development or high‑energy ion implantation applications.
• Strong proficiency in medium‑ to high‑energy/current ion implantation processes, with comprehensive knowledge of implanter systems, subsystems, and troubleshooting methods to minimize equipment downtime.
• Solid understanding of wide‑bandgap semiconductor materials (e.g., SiC, GaN) and their relevant dopant species.
• Expertise in ion channelling, ion bombardment, and their impact on implant species profiles.
• In‑depth comprehension of defect formation and annihilation processes in the implanted region of semiconductors.
• Familiarity with process simulation (e.g., SRIM/TRIM, Silvaco Athena, Sentaurus Process).
• Good publication record in semiconductor process or materials science journals.
• Ability to work collaboratively across multidisciplinary teams (process, metrology, device, modelling).
• Adept at mentoring and transferring knowledge to junior staff members.