Senior / Lead Process Engineer - GaN Epitaxy (APM), IME

Agency for Science, Technology and Research (A*STAR); Singapore; On-site; SGD 80,000 - 120,000; Full time

Job summary

A leading research agency in Singapore is seeking a Senior /Lead Process Engineer to develop innovative epitaxial processes for GaN on SiC technologies. The ideal candidate will have over 10 years of relevant experience, strong communication skills, and proficiency in semiconductor process development. Key responsibilities include process development, design of experiments, and technical presentations. This role offers the opportunity to contribute to cutting-edge research in the semiconductor industry.

Qualifications

• Master's degree in electrical/Electronic Engineering, Materials Science, Physics, or a related field.
• Above 10 years of proven experience in compound semiconductor epitaxy process development/manufacturing.
• Knowledge of semiconductor processes and characterization techniques is a plus.
• Excellent communication, collaboration, and self-motivation skills.
• Avid technical reader, critical thinker, and team player.
• Proficiency in data analysis and DOE tools is beneficial.

Responsibilities

• Develop innovative GaN on SiC HEMT epitaxial processes on an MOCVD system.
• Design of experiments to minimize line defects and enhance GaN HEMT device performance.
• Perform metrology and characterization of GaN/AlGaN epilayers.
• Prepare technical presentations and papers for internal meetings and conferences.
• Solve key technical challenges in the GaN RF electronics industry.
• Publish technical papers and draft technical disclosures/IP.
• Contribute ideas towards new funding proposals.
• Perform all other reasonable duties as assigned.

Job description

Senior /Lead Process Engineer

We are seeking a talented and passionate Senior /Lead Process Engineer to join our epitaxy team. You'll play a crucial role in developing cutting-edge platform technologies for high speed and medium voltage power devices, pushing the boundaries of performance and efficiency.

Responsibilities

• Develop and innovative GaN on SiC HEMT epitaxial processes on an MOCVD system, focusing on recipe development achieving high carrier mobility, low threading dislocation density, on 6/8-inch substrates.
• Design of experiments to minimize line defects, point defects and extended defects density, with emphasis on enhancing GaN HEMT device performance.
• Selective GaN regrowth for contact formation.
• Metrology and characterization of GaN/AlGaN epilayers (e.g. carrier mobility, threading dislocation density, FWHM rocking curve, thickness uniformity, surface roughness, crystal quality, stress, carrier mobility, etc.).
• Preparation of technical presentations and papers for internal meetings, as well as conferences and journals.
• Working with NSTIC-GaN and related team to solve key technical challenges in the GaN RF electronics industry.
• Publishing technical papers and drafting technical disclosures / IP.
• Contributing ideas towards new funding proposals.
• All other reasonable duties, as assigned.

Requirements

• Master's degree in electrical/Electronic Engineering, Materials Science, Physics, or a related field.
• Above 10 years of proven experience in compound semiconductor epitaxy process development/manufacturing (GaN or III-V preferred).
• Knowledge of semiconductor processes (lithography, etch, etc.) and characterization techniques (SEM, TEM, XRD, etc.) is a plus.
• Excellent communication, collaboration, and self-motivation skills.
• Avid technical reader, critical thinker, and team player.
• Proficiency in data analysis and DOE tools (Excel, JMP, Origin, etc.) is beneficial.