Process Integration Development (PID) Engineer – HKMG/RMG Integration

Tata Electronics Pvt. Ltd.; Ahmedabad District; On-site; INR 2,500,000 - 4,000,000; Full time

Job summary

Tata Electronics Private Limited (TEPL) seeks an experienced Process Integration Development (PID) Engineer for HKMG/RMG integration in advanced CMOS technology at 28nm and below. You will own gate stack engineering, EOT scaling, and device performance optimization, collaborating across FEOL/MEOL, device physics, and manufacturing teams.

The role requires hands-on expertise in HKMG/RMG, DOE-driven silicon learning, process-characterization, and technology transfer to enable high-volume

Qualifications

• Advanced CMOS process integration experience on 28nm+ nodes.

Responsibilities

• Own HKMG/RMG process integration for 28nm and below to optimize performance and reliability.
• Drive CMOS Process Integration technologies via DOE, characterization, and window optimization.
• Analyze process trade-offs to optimize transistor parameters (Vt, Id, Ioff, DIBL, SS).
• Support technology qualification, tech transfer, and high-volume manufacturing ramp.
• Improve yield and defect reduction using SPC, Cp/Cpk, and Pareto analyses.
• Correlate inline metrology and electrical data to identify risks and optimization opportunities.
• Use DOE, TCAD, JMP, Python and AI/ML to accelerate learning.
• Collaborate across Device, Process, Yield, Reliability, and Manufacturing teams.
• Provide technical leadership to solve complex process integration challenges.

Skills

HKMG/RMG integration

CMOS process integration

DOE development

Silicon characterization

Statistical analysis

Python

AI/ML basics

Device physics

Cross-functional collaboration

Education

M.S./Ph.D. in Electrical Engineering or related

Bachelors in Electrical/Materials/Physics or related

Tools

TCAD

JMP

Job description

Tata Electronics Private Limited (TEPL) is a greenfield venture of the Tata Group with expertise in manufacturing precision components.

Tata Electronics (a wholly owned subsidiary of Tata Sons Pvt. Ltd.) is building India's first AI-enabled state-of-the-art Semiconductor Foundry. This facility will produce chips for applications such as power management IC, display drivers, microcontrollers (MCU) and high-performance computing logic, addressing the growing demand in markets such as automotive, computing and data storage, wireless communications and artificial intelligence.

Tata Electronics is a subsidiary of the Tata Group. The Tata Group operates in more than 100 countries across six continents, with the mission "To improve the quality of life of the communities we serve globally, through long term stakeholder value creation based on leadership with Trust."

Job Description

We are seeking an experienced Process Integration Development (PID) Engineer – HKMG/RMG Integration for advanced CMOS technologies at 28nm and below, including FinFET nodes. This role is responsible for driving advanced CMOS Process Integration Development, with primary ownership of High-K Metal Gate (HKMG) and Replacement Metal Gate (RMG) process integration, enabling technology development, device performance optimization, yield enhancement, and manufacturing readiness.

The successful candidate will drive HKMG/RMG process integration while working across FEOL/MEOL integration, process-device interactions, silicon characterization, DOE development, process optimization, technology qualification, technology transfer, and high-volume manufacturing ramp. The role requires close collaboration with Process Module, Device, Yield, Reliability, Product Engineering, and Manufacturing teams.

At Tata Electronics Private Limited (TEPL), the Technology Development organization is responsible for developing, qualifying, and transferring various technology platforms from R&D into high-volume manufacturing, enabling world-class semiconductor technologies and manufacturing excellence.

Responsibilities

• Own High-K Metal Gate (HKMG) and Replacement Metal Gate (RMG) process integration for advanced CMOS technologies (28nm and below), including High-K dielectrics, gate stack engineering, work-function engineering, EOT scaling, threshold voltage tuning, gate leakage control, and gate-first/gate-last integration to achieve target device performance, manufacturability, and reliability.
• Develop and optimize CMOS Process Integration technologies for 28nm and below technology nodes by driving process-device interactions, DOE-driven silicon learning, process characterization, and process window optimization.
• Analyze process integration trade-offs using strong semiconductor device physics to optimize transistor characteristics, including Vt, Id, Ioff, DIBL, SS, mobility, matching, variability, and reliability, while achieving target device performance and manufacturability.
• Support technology qualification, technology transfer, manufacturing readiness, and production ramp activities, enabling successful transition from R&D into high-volume manufacturing.
• Drive manufacturing excellence through defect reduction, process capability enhancement, process robustness, and yield ramp activities using SPC, Cp/Cpk analysis, defect Pareto analysis, excursion investigations, and root-cause analysis to improve process stability, device performance, and yield.
• Establish process-to-device and yield correlations through analysis of inline metrology, WAT/PCM, electrical characterization, defectivity, physical analysis, reliability, and yield data to identify integration risks, process sensitivities, and process optimization opportunities.
• Utilize DOE, TCAD, JMP, Python, statistical analysis, and advanced data analytics (AI/ML methodologies) to accelerate technology learning, process optimization, and yield enhancement. Experience with one or more of these tools is a plus.
• Collaborate with Device, Process Module, Yield, Reliability, Product Engineering, and Manufacturing teams to drive device characterization, reliability qualification, yield improvement, technology transfer, and production ramp.
• Provide technical expertise to solve complex process integration challenges while driving innovation, continuous improvement, and manufacturing excellence.

Essential Attributes

• Strong expertise in advanced CMOS Process Integration for 28nm and below technology nodes, with solid understanding of FEOL and MEOL integration, process-device interactions, and semiconductor manufacturing.
• Demonstrated expertise in High-K Metal Gate (HKMG) and Replacement Metal Gate (RMG) process integration, including High-K dielectrics, gate stack engineering, work-function engineering, EOT scaling, threshold voltage tuning, gate leakage control, and gate-first/gate-last integration.
• Hands-on experience in 28nm planar CMOS or more advanced logic technology nodes. Experience with FinFET technology, advanced patterning and next-generation device architectures is a plus.
• Strong semiconductor device physics foundation with the ability to optimize transistor performance parameters such as Vt, Id, Ioff, DIBL, SS, mobility, variability, matching, reliability, and manufacturability through process integration.
• Strong analytical and problem-solving skills with proven experience in DOE development, process characterization, statistical analysis, process window optimization, silicon learning, and root-cause analysis of process, device, yield, and reliability issues.
• Proven experience in technology qualification, technology transfer, manufacturing readiness, and production ramp, enabling successful transition from R&D into high-volume manufacturing.
• Demonstrated track record in yield improvement, defect reduction, SPC, Cp/Cpk enhancement, excursion management, process robustness, and high-volume manufacturing support for advanced semiconductor technologies.
• Ability to correlate inline metrology, WAT/PCM, electrical characterization, defectivity, physical analysis, reliability, and yield data to identify integration risks, process sensitivities, and process optimization opportunities.
• Experience with TCAD, JMP, Python, statistical tools, and advanced data analytics (AI/ML methodologies) is a plus.
• Strong cross-functional collaboration skills with Device, Process Module, Yield, Reliability, Product Engineering, and Manufacturing teams.
• Strong communication, technical presentation, and problem-solving skills, with the ability to drive innovation, continuous improvement, and technical decision-making in a fast-paced semiconductor technology development environment.

Qualifications

• M.S. or Ph.D. in Electrical Engineering, Materials Science, Physics, Semiconductor Engineering, or related field with 3+ to 10 years of experience.
• Bachelor’s degree in electrical engineering, Materials Science, Physics, Semiconductor Engineering, or related field with 7+ to 15 years of experience.
• Experience in 28nm planar CMOS, FinFET, or advanced logic technologies.
• Strong understanding of semiconductor device physics, process integration, DOE, statistical analysis, yield analysis, and process optimization.
• Excellent communication and cross-functional collaboration skills.