Remote/Hybrid Postdoctoral Researcher: 2D & Oxide Semiconductors

Tyndall; Cork; Hybrid; EUR 47,000 - 54,000; Full time

Benefits offered by this job

Pension scheme

Hybrid/remote working

Annual leave

Job summary

Tyndall National Institute in Cork, Ireland, invites applications for a Post-Doctoral Researcher role in the NanoIC pilot line, focusing on oxide semiconductors and 2D materials integration into CMOS platforms. You will work on materials growth and device integration, employing advanced characterisation methods and collaborating with a multidisciplinary team.

The role develops high-performance FET channel materials for BEOL CMOS nodes, contributing to publication output and external funding.

Qualifications

• PhD in materials sciences, engineering, physics, chemistry or related discipline.
• Hands on experience with either chemical vapour deposition or atomic layer deposition.
• Experience in material characterisation (Raman spectroscopy, XPS, XRD, electron microscopy).
• Capability of working independently and effectively within a team to achieve results.
• A demonstrated capability in idea generation and the delivery of successful research projects.

Responsibilities

• Collaborate with NanoIC modelling and device fabrication groups and the wider technical team.
• Identify external funding opportunities, prepare grant proposals and assess results for potential exploitation.
• Collaborate with project partners and carry out administrative and management work for NanoIC deliverables.
• Support access to NanoIC’s Pilot Line for external users as required.
• Disseminate results to stakeholders through reports, publications and conferences.

Skills

PhD in materials sciences/engineering/

CVD or ALD experience

Materials characterisation (Raman, XPS

Independent and team work

Research project delivery

Education

PhD in materials science or related

Job description

Tyndall National Institute in Cork, Ireland, invites applications for a Post-Doctoral Researcher role in the NanoIC pilot line, focusing on oxide semiconductors and 2D materials integration into CMOS platforms. You will work on materials growth and device integration, employing advanced characterisation methods and collaborating with a multidisciplinary team.

The role develops high-performance FET channel materials for BEOL CMOS nodes, contributing to publication output and external funding.