TCAD Simulations of State-Of-The-Art CMOS Devices at Cryogenic Temperatures

Imec India Private Limited; Cambridge; On-site; GBP 150,000 - 200,000; Full time

Job summary

A leading technology research organization in the UK seeks candidates for an internship and thesis project focused on simulating CMOS technology at cryogenic temperatures. The role involves analyzing device behavior, performing TCAD simulations, and collaborating with an internationally recognized research team. Candidates should possess a relevant master's degree in engineering or science. Competitive allowance provided.

Benefits

Imec allowance

Qualifications

• Background in Electrotechnics, Electrical Engineering, Physics, or Nanoscience & Nanotechnology.
• Familiarity with TCAD simulation tools is beneficial.

Responsibilities

• Analyse CMOS device parameters under cryogenic conditions.
• Perform TCAD simulations on scaled CMOS devices.
• Collaborate with a research team on cryogenic electronics.

Education

Master of Engineering Technology

Master of Engineering Science

Master of Science

Job description

As quantum computing and cryogenic electronics become increasingly important, understanding the behavior of CMOS devices at cryogenic temperatures is critical. Modern CMOS technology is optimized for room-temperature operation. However, as the demand for cryogenic applications grows, there is a pressing need to study device behavior at very low temperatures. The electrical properties of materials and interfaces at cryogenic temperatures can deviate significantly from their room temperature values, affecting device performance, reliability, and noise characteristics.

Technology Computer-Aided Design (TCAD) simulations offer a powerful tool to analyse CMOS devices under cryogenic conditions. These simulations enable researchers to predict the performance of advanced CMOS nodes at extremely low temperatures, offering critical insights for designing and optimizing devices specifically for cryogenic applications.

This project will focus on using TCAD to simulate and study state-of-the-art CMOS technology nodes at cryogenic temperatures, with a strong emphasis on validating physical models (band tails, carrier mobility, charge trapping, etc.) through continuous comparison with experimental data.

Project Tasks and Objectives

• Analyse the impact of cryogenic conditions on key CMOS device parameters such as threshold voltage, carrier mobility, and subthreshold slope
• Investigate the influence of cryogenic temperatures on interface and bulk defects, leakage currents, and overall device reliability
• Collaborate with an internationally recognized research team working on cryogenic electronics
• Set up and perform TCAD simulations of scaled CMOS devices at cryogenic temperatures using industry-standard simulation tools
• Develop and refine simulation models to account for temperature-dependent effects in advanced technology nodes
• Present findings in a clear and professional manner to a technical audience

Type of Project: Combination of internship and thesis

Master's degree: Master of Engineering Technology; Master of Engineering Science; Master of Science

Master program: Electrotechnics/Electrical Engineering; Physics; Nanoscience & Nanotechnology

Duration: 1 academic year

Supervisor: Houman Zahedmanesh

For more information or application, please contact the supervising scientists Alexander Grill ([e-mail]) and Ruben Asanovski ([e-mail]).

Imec allowance will be provided.