(Senior) Principal Device Engineer (m/f/d) – GaN Power Devices

Nexperia

Manchester

On-site

GBP 90,000 - 130,000

Full time

14 days+
Application generator

Get a reply from this employer — a resume and cover letter tailored to exactly what they’re hiring for.

Get past ATS filters

Job summary

Nexperia is seeking a senior engineer to lead the development of next-generation GaN power devices, providing technical leadership in device architecture, simulation, and optimization.

You will translate advanced device physics into manufacturable solutions, drive TCAD modeling, and collaborate with process, characterization, reliability, and product engineering teams across an international environment.

Qualifications

  • Degree (MSc/PhD) or equivalent in semiconductor physics, electrical engineering, or related field.
  • Proven experience in GaN or wide bandgap device development.
  • Strong expertise in device physics, TCAD simulation, and semiconductor design.
  • Track record of leading complex, multidisciplinary technical projects.
  • Analytical, self-driven, and collaborative mindset in an international environment.

Responsibilities

  • Lead device architecture definition and optimization for GaN technologies
  • Own performance targets and balance trade-offs across performance, reliability, and manufacturability
  • Drive TCAD simulation, modeling, and design to support technology and product development
  • Collaborate with cross-functional teams across process, characterization, reliability, and product engineering
  • Support industrialization by delivering robust, scalable device concepts

Skills

GaN device development
TCAD simulation
Semiconductor device physics
Technical leadership
Cross-functional collaboration

Education

MSc/PhD in semiconductor physics / electrical engineering

Tools

TCAD tools

Job description

About the Role

Join Nexperia and drive the development of next-generation GaN power devices. In this senior role, you will provide technical leadership in device architecture, simulation, and optimization—translating advanced device physics into high-performance, manufacturable solutions.

What You Will Do
  • Lead device architecture definition and optimization for GaN technologies
  • Own performance targets and balance trade-offs across performance, reliability, and manufacturability
  • Drive TCAD simulation, modeling, and design to support technology and product development
  • Collaborate with cross-functional teams across process, characterization, reliability, and product engineering
  • Support industrialization by delivering robust, scalable device concepts
Your Profile
  • Degree (MSc/PhD) or equivalent in semiconductor physics, electrical engineering, or related field
  • Proven experience in GaN or wide bandgap device development
  • Strong expertise in device physics, TCAD simulation, and semiconductor design
  • Track record of leading complex, multidisciplinary technical projects
  • Analytical, self-driven, and collaborative mindset in an international environment
Your Team

Join our growing global GaN team and help shape the future of power discretes. We are seeking talented individuals with deep technical expertise, an open mindset, and a drive to solve complex challenges and turn ideas into practical, scalable solutions.

Talent acquisition based on Nexperia vacancies is not appreciated.

Nexperia job adverts are Nexperia copyright © material and the word Nexperia® is a registered trademark.

D&I Statement

As an equal-opportunity employer, Nexperia values diversity not just because it is the right thing to do but because diverse teams perform better.

We are dedicated to being inclusive, and a proof point of this dedication is that we were the main partner of the very first Dutch Paralympic Team NL House during the Paris 2024 Paralympic Games.

Our recruitment process is inclusive and accessible to all, and we consider all applicants fairly, as well as providing a safe work environment and reasonable adjustments where requested.

In addition, we offer our colleagues the possibility to join employee resource groups such as the Pride Network Group or global and local Women's groups.

Nexperia is committed to increasing women in management positions to 30% by 2030.

Looking to push boundaries in a company where your talents can shine? Join TeamNexperia.

Get your free, confidential resume review.

or drag and drop your file here.

Similar jobs

Similar jobs worth comparing

Principal Product Application Engineer - GaN
Principal Product Application Engineer - GaN

Nexperia • Manchester

On-site
GBP 80,000 - 110,000
Flexible hours
Competitive salary and benefits
Training and development
+1
Principal Device Engineer
Principal Device Engineer

Nexperia • Manchester

Hybrid
GBP 90,000 - 130,000
Salary incentives up to 20%
Contributory pension scheme
Hybrid and on-site work
Senior System Engineer
Senior System Engineer

Nexperia • North East

On-site
GBP 70,000 - 110,000
Senior Principal System Architect - Integrated Power Products
Senior Principal System Architect - Integrated Power Products

Nexperia • Manchester

On-site
GBP 120,000 - 180,000
Principal Product Modelling Engineer
Principal Product Modelling Engineer

Nexperia • Manchester

On-site
GBP 90,000 - 130,000
Principal Process Integration Engineer
Principal Process Integration Engineer

Nexperia • Manchester

Hybrid
GBP 70,000 - 100,000
Hybrid working policy
Excellent pension scheme
Relocation assistance where applicable
Senior Competitor Analyst
Senior Competitor Analyst

Nexperia • Manchester

Hybrid
GBP 70,000 - 90,000
Bonus up to 6%
Pension scheme up to 9%
12× salary life assurance
+4
Senior GaN Power Device Architect & TCAD Lead
Senior GaN Power Device Architect & TCAD Lead

Nexperia • Manchester

On-site
GBP 90,000 - 130,000
Industrial Director MOS
Industrial Director MOS

NEXPERIA B.V. • Manchester

On-site
GBP 150,000 - 210,000
Application Engineer (AI/Hot swap)
Application Engineer (AI/Hot swap)

Nexperia • Manchester

On-site
GBP 70,000 - 100,000
Excellent pension
Bonus up to 10%
Bonus up to 20% (stretch)
+5