Postdoctoral Research Associate in ultrawide bandgap Gallium Oxide MOCVD Growth

Physics World; United Kingdom; On-site; GBP 30,000 - 40,000; Full time

Job summary

A leading research institution in the UK is seeking a Postdoctoral Research Associate to focus on MOCVD growth of Gallium Oxide and related alloys for next-generation high voltage devices. The role involves extensive collaboration within a research team, access to advanced materials characterization, and opportunities to supervise PhD students. Candidates should possess a PhD or equivalent experience in relevant fields. This position is initially funded for 2 years.

Qualifications

• Experience in MOCVD growth, ideally in Gallium Oxide.
• Strong publication record in relevant fields.
• Ability to work with and supervise PhD students.

Responsibilities

• Develop new materials and structures for high voltage electronics using MOCVD.
• Collaborate with a team on advanced electrical and thermal device testing.
• Contribute to research projects under UKRI and European Space Agency.

Skills

MOCVD growth expertise

Materials characterization (AFM, XRD, Hall measurements)

Collaboration and supervision

Education

Postgraduate (PhD) in Physics, Materials Science or Engineering

Tools

Agnitron MOCVD system

Simulation tools (ATLAS, ANSYS)

Job description

Postdoctoral Research Associate in ultrawide bandgap Gallium Oxide MOCVD Growth

Applications are invited for the role of Postdoctoral Researcher position at the Centre for Device Thermography and Reliability (CDTR), led by Professor Kuball, to provide leading contributions in the field in MOCVD growth of Gallium Oxide and related alloys, with application in next-generation high voltage devices. This role focuses on developing new materials and material structures high voltage electronics using MOCVD.

The CDTR is a vertically integrated research group, from semiconductor growth, materials analysis, device design, device fabrication and testing (electrical, reliability, thermal management) to packaging. A recent focus of our MOCVD research has been the growth of Ga2O3 on diamond and other high-thermal conductivity substrates, to enable efficiently heat‑sunk devices. Bristol has a state-of-the-art Agnitron MOCVD system for Ga2O3 and (AlxGa1-x)2O3 growth, with plans to expand to other oxide materials. Alongside MOCVD growth, you will have the opportunity to access materials characterization including x‑ray diffraction, atomic force microscopy and transmission electron microscopy. Furthermore, you will access extensive device fabrication capabilities, and a device testing suite to perform advanced electrical, thermal, to electric field analysis of devices, and simulation tools (ATLAS, ANSYS). You will collaborate within our 35‑member team, our academic and industrial partners and have the opportunity to make a major impact on future power device technology.

The CDTR leads the UKRI Innovation and Knowledge Centre REWIRE and is part of Horizon Europe programmes on innovative cooling solutions for chips, as well as European Space Agency (ESA) and DARPA programmes on high‑frequency high‑power RF electronics. This position benefits from the Chair in Emerging Technologies awarded to Professor Kuball by the Royal Academy of Engineering (RAEng).

Applicants should have postgraduate (PhD) experience in Physics, Materials Science or Engineering, or be working towards one, or have equivalent professional qualification/experience, ideally with a good publication record. This position requires extensive expertise in MOCVD growth, preferably in Gallium Oxide, and in materials characterization, including AFM, XRD and Hall measurements. A willingness to work together with, and co‑supervise, PhD students will be necessary.

The position has funding for 2 years in the first instance.

Informal enquiries (not applications) to Professor M. Kuball, [e-mail], tel [phone].

The University is committed to creating and sustaining a fully inclusive culture. We welcome applicants from all backgrounds and communities, especially from women and other groups currently under‑represented in our department.