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Postdoc in Advanced Electrical Analysis/Device Fabrication of Wide/Ultrawide Bandgap Semiconductors

Physics World

United Kingdom

On-site

GBP 35,000 - 45,000

Full time

Today
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Job summary

A leading academic institution in the United Kingdom is seeking a Postdoctoral Researcher in advanced electrical analysis and device fabrication of wide/ultrawide bandgap semiconductors. The role emphasizes research on GaN, Gallium Oxide, SiC, and diamond materials, requiring a PhD in a relevant field and extensive experience in characterization and fabrication. This position offers a collaborative environment and opportunities for impactful research on power and RF electronics.

Qualifications

  • Extensive experience in advanced electrical characterization of wide and ultrawide bandgap materials.
  • Experience in semiconductor device processing is essential.
  • Strong publication record preferred.

Responsibilities

  • Conduct advanced electrical characterization of semiconductor materials and devices.
  • Fabricate and develop unique device structures.
  • Collaborate with a 35-member team and industrial partners.

Skills

Advanced electrical characterization
Semiconductor device fabrication
Photolithography
Laser writer or e-beam lithography

Education

Postgraduate (PhD) in Physics, Materials Science, or Engineering

Tools

Silvaco Victory/ATLAS
ANSYS
Job description

Postdoc in Advanced Electrical Analysis/Device Fabrication of Wide/Ultrawide Bandgap Semiconductors

Applications are invited for the role of Postdoctoral Researcher position at the Centre for Device Thermography and Reliability (CDTR), led by Professor Kuball. This role encompasses the advanced electrical characterization of wide and ultra-wide bandgap semiconductor materials and devices, including GaN, Gallium Oxide, SiC and diamond (key enabling materials for power and RF electronics) and/or semiconductor device fabrication.

Examples of interest include graded AlGaN/GaN channel and AlScN device technologies for RF applications, and vertical GaN devices for power applications. You will have the opportunity to develop and study unique device structures, and to access the extensive electrical device testing suite available in Bristol, in addition to thermal and electric field analysis of devices, and simulation tools (Silvaco Victory/ATLAS, ANSYS). You will also have access to a state-of-the-art clean room and the opportunity to collaborate within our 35-member team as well as with our industrial partners spanning the semiconductor supply chain, giving you the opportunity to make a major impact on future semiconductor device technology.

The CDTR leads numerous UK and international strategic programmes on power and RF electronics, including the ESA programme S2CANT, the EPSRC programme ULTRAlGaN and the UKRI Innovation and Knowledge Centre REWIRE, focusing on GaN, Gallium Oxide, SiC and diamond power materials and devices, from their fundamental understanding and development, to the commercialization of device technology in part co-designed with industry, a strategic investment of the UK funding agency UKRI in excess of £18M. This position benefits from the Chair in Emerging Technologies awarded to Professor Kuball by the Royal Academy of Engineering (RAEng) and various US funded programmes.

Applicants should have postgraduate (PhD) experience in Physics, Materials Science or Engineering, or be working towards one, or have equivalent professional qualification/experience, ideally with a good publication record. This position requires extensive experience in advanced electrical characterization of wide and ultrawide bandgap materials and/or devices and/or semiconductor device processing (essential photolithography/laser writer or e-beam lithography experience). A willingness to work together with, and co-supervise, PhD students will be necessary.

The position has funding for 2 years in the first instance.

Informal enquiries (not applications) to Professor M. Kuball, martin.kuball@bristol.ac.uk, tel +44(0)117 928 8734.

The University is committed to creating and sustaining a fully inclusive culture. We welcome applicants from all backgrounds and communities, especially from women and other groups currently under-represented in our department.

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