PhD in Ferroelectric FETs — Advanced Materials & Devices

PSI; Villigen; Remote; CHF 40,000 - 55,000; Full time

Job summary

The Paul Scherrer Institute invites applications for a PhD Student in ferroelectric field effect transistors in Villigen, within the Physical Properties of Materials Group. You will grow and characterize perovskite oxide thin films, establish structure–property correlations, and contribute to device architectures and publication of results.

Enrolled in the ETH Zürich Doctoral program, the position offers on-site work, substantial interdisciplinary collaboration, and opportunities to develop

Qualifications

• Master’s degree in materials science, chemistry, physics or related field.
• Foundational knowledge in solid state chemistry/physics; semiconductors/ferroelectrics helpful.
• Understanding of physical vapor deposition, vacuum systems; computational studies of electronic structure; familiarity with cleanroom fabrication and Python is advantageous.
• Communicative, team‑oriented; enjoys interdisciplinary research.

Responsibilities

• Perform epitaxy and characterization of functional perovskite oxide thin films and their heterostructures.
• Establish composition-structure-function relationships for ferroelectric, semiconducting and metallic materials with collaborators.
• Grow multilayers, optimize lithographic workflows and test devices as ferroelectric FETs.
• Contribute band-structure computations toward high‑performance FETs.
• Publish results in peer‑reviewed journals.

Skills

Python

Solid-state chemistry knowledge

Materials physics concepts

Device fabrication familiarity

Electronic structure computations

Team-oriented, communicative

Education

Master’s degree or equivalent in materials science, chemistry, physics

Tools

Python

Job description

The Paul Scherrer Institute invites applications for a PhD Student in ferroelectric field effect transistors in Villigen, within the Physical Properties of Materials Group. You will grow and characterize perovskite oxide thin films, establish structure–property correlations, and contribute to device architectures and publication of results.

Enrolled in the ETH Zürich Doctoral program, the position offers on-site work, substantial interdisciplinary collaboration, and opportunities to develop